Samsung 8GB DDR4 2666MHz PC4-21300 (PC4-2666V) CL19 SODIMM 1Rx8 Single Rank 1.2V 260-Pin Laptop, Notebook RAM Memory

Name: Samsung 8GB DDR4 2666MHz PC4-21300 (PC4-2666V) CL19 SODIMM 1Rx8 Single Rank 1.2V 260-Pin Laptop, Notebook RAM Memory
Brand: Samsung
SKU: B0DX7Q1LRT
Availability: InStock

Buy Samsung 8GB DDR4 2666MHz PC4-21300 (PC4-2666V) CL19 SODIMM 1Rx8 Single Rank 1.2V 260-Pin Laptop, Notebook RAM Memory online at low price in India on Amazon.in. Check out Samsung 8GB DDR4 2666MHz PC4-21300 (PC4-2666V)

₹12,610

₹16,528

-24%

You save ₹3,918

All-time Low

₹12,610

30d Average

₹12,610

Deal Score

55%

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Last checked 17 hours ago · 2 days of price history · Alerts are free

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All-time low: ₹12,610 · All-time high: ₹12,610

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₹12,610

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Store	Price	Store rating	Coupon	Availability
Amazon Best	₹12,610	—	—	in stock	Buy

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Specifications

Technical details

RAM Memory Technology: DDR4
Memory Speed: 2666 MHz
Compatible Devices: Laptop
Product Features: Non-ECC Unbuffered
Voltage: 1.2 Volts
Column Address Strobe Latency: CL19
Form Factor: SO-DIMM
ProcessorSpeed: 21300 Megabytes Per Second
Number Of Pins: 260
Memory Form Factor: SODIMM
Memory Generation: DDR4
Brand Name: Samsung
Number of Items: 1
Manufacturer: Samsung
Number of Packs: 1
Country of Origin: China
Warranty Description: No Warranty
Best Sellers Rank: #92,033 in Computers & Accessories (See Top 100 in Computers & Accessories) #833 in Memory
ASIN: B0DX7Q1LRT
RAM Size: 8 GB

Features

Feature 1: Genuine Samsung DDR4 Memory RAM | Product may be M471A1K43BB1-CTD, M471A1K43DB1-CTD, M471A1K43CB1-CTD, M471A1K43EB1-CTD or an equivalent Samsung part number identical in specifications and performance
Feature 2: Single 8GB RAM Module; DDR4 SO-DIMM 260 Pin; Speeds up to 2666MHz/2667MHz PC4-21300 (PC4-2666V)
Feature 3: NON-ECC Unbuffered; 1Rx8 - Single Rank x8; JEDEC DDR4 standard 1.2V
Feature 4: Compatible for select select DDR4 Laptop, Notebook, and All-in-One (AIO) computer systems
Feature 5: Expands your system's available memory resource improving performance, reducing bottlenecks, and increasing workload capacity